收藏本站
Photomicrosensor (Reflective)
EE-SY125
I Dimensions
Note: All units are in millimeters unless otherwise indicated.
I Features
? Ultra-compact model.
? PCB surface mounting type
I Absolute Maximum Ratings (Ta = 25 ° C)
Item
Symbol
Rated value
Emitter
Forward current
Pulse forward
I F
I FP
50 mA (see note 1)
1 A (see note 2)
current
Reverse voltage
V R
4V
Detector
Collector–Emitter V CEO
voltage
Emitter–Collector V ECO
voltage
30 V
5V
Collector current
Collector
dissipation
I C
P C
20 mA
75 mW (see note 1)
Ambient
Operating
Topr
– 25 ° C to 85 ° C
A
Internal Circuit
C
temperature Storage
Soldering temperature
Tstg
Tsol
– 40 ° C to 100 ° C
260 ° C (see note 3)
Unless otherwise specified, the
tolerances are ± 0.15 mm.
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25 ° C.
K
Terminal No.
A
Name
Anode
E
2. The pulse width is 10 μ s maximum with a frequency of 100 Hz.
3. Complete soldering within 10 seconds.
I Ordering Information
K
C
E
Cathode
Collector
Emitter
Description
Photomicrosensor (reflective)
Model
EE-SY125
I Electrical and Optical Characteristics (Ta = 25 ° C)
Item
Symbol
Value
Condition
Emitter
Detector
Forward voltage
Reverse current
Peak emission wavelength
Light current
V F
I R
λ P
I L
1.2 V typ., 1.4 V max.
0.01 μ A typ., 10 μ A max.
950 nm typ.
50 μ A min., 300 μ A max.
I F = 20 mA
V R = 4 V
I F = 4 mA
I F = 4 mA, V CE = 2 V
Aluminum-deposited surface,
d = 1 mm (see note)
Dark current
Leakage current
Collector–Emitter saturated
I D
I LEAK
V CE (sat)
2 nA typ., 200 nA max.
200 nA max.
---
V CE = 10 V, 0 l x
I F =4 mA, V CE = 2 V with no reflection
---
voltage
Peak spectral sensitivity
λ P
930 nm typ.
V CE = 10 V
wavelength
Rising time
Falling time
tr
tf
35 μ s typ.
25 μ s typ.
V CC = 2 V, R L = 1 k ? , I L = 100 μ A
V CC = 2 V, R L = 1 k ? , I L = 100 μ A
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
298
Photomicrosensor (Reflective) EE-SY125
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
EE-SY169A-D PHOTOMICROSENSORW/PLASTIC COVR
EE-SY169 SENSR OPTO TRANS 4MM REFL TH PCB
EE-SY171 SENSOR OPTO TRANS 3.5MM REFL PCB
EE-SY193 SENSOR OPTO TRANS 1MM SMD
EE-SY199 SENSOR OPTO TRANS 1MM REFL SMD
EE-SY201 OPTO SENSOR REFLECT TYPE 4MM
EE-SY313 OPTO SENSOR REFLECT 4.4MM
EE-SY410 OPTO SENSOR 5MM REFLECT LIGHT-ON
相关代理商/技术参数
EE-SY125 制造商:Omron Electronic Components LLC 功能描述:Optical Sensor (Switch) Reflective
EESY169 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin
EE-SY169 功能描述:光学开关（反射型，光电晶体管输出） REFL CONV PHTOTRNSTR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
EESY169A 制造商:Omron Electronic Components LLC 功能描述:NON-AMPLIFIED SENSOR - Bulk 制造商:Omron Electronic Components LLC 功能描述:SENSR OPTO TRANS 4MM REFL TH PCB 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin
EE-SY169A 功能描述:光学开关（反射型，光电晶体管输出） REFL CONV PHTOTRNSTR RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
EE-SY169A 制造商:Omron Electronic Components LLC 功能描述:OPTO SWITCH REFLECTIVE
EE-SY169A 制造商:Omron Electronic Components LLC 功能描述:OPTOSwITCH OPTOCOuPLER OuTPuT TyPE:TRANS
EESY169AD 制造商:OMRON AUTOMATION AND SAFETY 功能描述:PHOTOMICROSENSORW/PLASTIC COVR 制造商:Omron Electronic Components LLC 功能描述:Photointerrupter Reflective Phototransistor 4-Pin